SOLID-STATE IMAGING DEVICE AND ELECTRONIC INSTRUMENT

摘要

A solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.

主权项

1. An imaging device comprising:
a first semiconductor region including (a) a photoelectric conversion region having a first region of the first conduction type and a second region of a second conduction type, (b) a floating diffusion of the second conduction type, (c) an impurity region of the first conduction type and (d) a depletion region between the floating diffusion and the impurity region; a second semiconductor region including pixel transistors; and an isolation dielectric region on the photoelectric conversion region.