COPPER WIRE AND DIELECTRIC WITH AIR GAPS

摘要

Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
forming a dielectric layer with a via opening; forming a wire comprising:
forming a barrier layer on and over the dielectric layer;depositing an electroplated material on and over the barrier layer;forming a cap layer on and over the electroplated material; andforming spacers on sidewalls of the electroplated material; and forming a dielectric film over and around the wire and directly contacting a top surface of the cap layer, the spacers, and a top surface of the dielectric layer with the via opening, wherein:
the barrier layer comprises a first conductive material;the cap layer comprises a second conductive material different than the first conductive material; andthe spacers comprise an insulator material.