| 摘要 |
Provided are a method and an apparatus for plasma processing in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an embodiment, a voltage is applied to the ESC after the processing plasma is struck, but the voltage is increased or ramped in a step-wise manner to achieve the desired final ESC voltage. In an alternative embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing a wafer. The current spikes associated with application of the voltage to the ESC are reduced while the processing plasma is present, thereby reducing deposition or transfer of particles on the wafer. The method for treating a substrate comprises the following steps: storing the substrate in a plasma processing chamber including ESC; igniting a plasma in the plasma processing chamber; applying the ESC voltage to the ESC, wherein the ESC voltage is ramped from a first set point to a second set point by using at least one intermediate set point arranged between the first set point and the second set point; and etching the substrate by using the plasma. |
