发明名称 THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 A thermoelectric element comprises a semiconductor substrate, multiple first and second semiconductor fin structures; multiple first and second semiconductor nanowires; and first to third electrodes. The first and second semiconductor fin structures protrude from the semiconductor substrate and are extended in the first direction. The first semiconductor nanowires are formed on the first semiconductor fin structures and include first impurities. The second semiconductor nanowires are formed on the second semiconductor fin structures, and include second impurities. The first electrode is connected to one end of the first semiconductor nanowires, and one end of the second semiconductor nanowires. The second electrode is connected to the other ends of the first semiconductor nanowires. The third electrode is connected to the other ends of the second semiconductor nanowires. A purpose of the present invention is providing the thermoelectric element effectively distributing heat generated inside a semiconductor device.
申请公布号 KR20160012871(A) 申请公布日期 2016.02.03
申请号 KR20140166117 申请日期 2014.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KWANG HO;YANG, JUN HYEOK;KO, HYUNG JONG;KIM, SE KI;PARK, HO JIN;AN, SE RA
分类号 H01L35/04;H01L35/34 主分类号 H01L35/04
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