METHOD FOR MANUFACTURING SUBSTRATE AND MANUFACTURING APPARATUS USED THE SAME
摘要
The present invention discloses a substrate manufacturing method and a substrate manufacturing apparatus used for the same. The method may include the steps of: providing a substrate having a mask layer into a chamber; inducing a plasma reaction in the chamber; alternately providing a first gas and a second gas into the chamber, and etching the substrate exposed from the mask layer. Whenever each of the first gas and the second gas is provided into the chamber, each gas can be supplied at a stabilized supply pressure without the fluctuation of a cross-feed pressure pulse of the first gas and the second gas.
申请公布号
KR20160012302(A)
申请公布日期
2016.02.03
申请号
KR20140093323
申请日期
2014.07.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JEON, KANG MIN;KIM, KYUNG SUN;SUNG, DOUG YONG;KIM, TAE HWA;PARK, HEUNG SIK;KIM, JUNG MIN