COATING COMPOSITION FOR FORMING FINE PATTERNS AND MOTHOD OF FORMING FINE PATTERNS BY USING THE SAME

摘要

The present invention relates to a coating composition for forming fine patterns, which can be used for negative tone development photoresist in ArF immersion photoresist, and to a method for forming fine patterns using the same. The coating composition for forming fine patterns comprises a resin including any one first repeating unit selected from the group consisting of repeating units represented by chemical formula 1 to chemical formula 3 and combinations thereof. Chemical formula 1 to chemical formula 3 are the same as described in the detailed description of the present invention. The coating composition for forming fine patterns according to the present invention can form fine patterns smaller than 0.05 μm without a separate process of applying temperature and can achieve a significant improvement in the miniaturization and stability of a semiconductor device including various patterns by minimizing the structural defects of photoresist patterns such as top rounding, undercut, etc. occurring when forming fine patterns in a semiconductor manufacturing process.