Buried trench isolation in integrated circuits

摘要

A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.

主权项

1. A method, comprising:
forming a trench in a substrate, the trench having a closed end within the substrate and an open end adjacent a surface of the substrate; forming a seed layer in the trench before initiating a reshaping of portion of the substrate surrounding the open end of the trench; initiating the reshaping of portion of the substrate surrounding the open end of the trench; closing the open end of the trench with substrate material to form an isolation region within the substrate; and creating first and second devices on the surface of the substrate on opposite sides of the isolation region.