| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a rectifier coupled between a circuit ground and a terminal for coupling to an external circuit, a transistor-enhanced current path coupled to the rectifier, and a switching circuit coupled to the transistor-enhanced current path and coupled between the terminal and the circuit ground. The switching circuit is configured to turn off the transistor-enhanced current path during normal operation, and turn on the transistor-enhanced current path when an electrostatic discharge occurs at the terminal. | ||
| 申请公布号 | US9252592(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201414184570 | 申请日期 | 2014.02.19 |
| 申请人 | MACRONIX INTERNATIONAL CO., LTD. | 发明人 | Wang Shih Yu |
| 分类号 | H02H7/125;H02H9/04 | 主分类号 | H02H7/125 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
| 主权项 | 1. A semiconductor device, comprising: a rectifier coupled between a circuit ground and a terminal for coupling to an external circuit; a current path coupled to the rectifier, the current path including at least one transistor; and a switching circuit coupled to the current path and coupled between the terminal and the circuit ground, the switching circuit being configured to: turn off the current path during normal operation, andturn on the current path when an electrostatic discharge occurs at the terminal. | ||
| 地址 | Hsinchu TW | ||