发明名称 Semiconductor chip and semiconductor arrangement
摘要 One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path.
申请公布号 US9252140(B2) 申请公布日期 2016.02.02
申请号 US201213427344 申请日期 2012.03.22
申请人 Infineon Technologies AG 发明人 Zojer Gerhard;Auer Daniel;Utz Gerrit;Kabusch Claudia
分类号 H01L27/088;H01L29/66;H01L21/70;H01L29/06;H01L23/34;H01L27/02;H01L23/367;B60R21/017;H01L27/06 主分类号 H01L27/088
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor chip comprising: a semiconductor body comprising an inner region and a ring-shaped outer region that surrounds the inner region; an electronic structure that is monolithically integrated in the inner region and that comprises a controllable first semiconductor component with a first load path and a first control input for controlling the first load path; a ring-shaped second semiconductor component that is monolithically integrated in the ring-shaped outer region and comprises a second load path, the ring-shaped second semiconductor component surrounding the inner region, wherein the ring-shaped second semiconductor component is a transistor that comprises a cell structure with a plurality of second transistor cells that are evenly distributed over the ring-shaped outer region and that have conduction paths electrically connected in parallel to form the second load path; wherein the first load path and the second load path are not electrically connected in parallel; and wherein at least one of the first semiconductor component and the second semiconductor component is a DMOS transistor.
地址 Neubiberg DE