发明名称 |
Semiconductor chip and semiconductor arrangement |
摘要 |
One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path. |
申请公布号 |
US9252140(B2) |
申请公布日期 |
2016.02.02 |
申请号 |
US201213427344 |
申请日期 |
2012.03.22 |
申请人 |
Infineon Technologies AG |
发明人 |
Zojer Gerhard;Auer Daniel;Utz Gerrit;Kabusch Claudia |
分类号 |
H01L27/088;H01L29/66;H01L21/70;H01L29/06;H01L23/34;H01L27/02;H01L23/367;B60R21/017;H01L27/06 |
主分类号 |
H01L27/088 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A semiconductor chip comprising:
a semiconductor body comprising an inner region and a ring-shaped outer region that surrounds the inner region; an electronic structure that is monolithically integrated in the inner region and that comprises a controllable first semiconductor component with a first load path and a first control input for controlling the first load path; a ring-shaped second semiconductor component that is monolithically integrated in the ring-shaped outer region and comprises a second load path, the ring-shaped second semiconductor component surrounding the inner region, wherein the ring-shaped second semiconductor component is a transistor that comprises a cell structure with a plurality of second transistor cells that are evenly distributed over the ring-shaped outer region and that have conduction paths electrically connected in parallel to form the second load path; wherein the first load path and the second load path are not electrically connected in parallel; and wherein at least one of the first semiconductor component and the second semiconductor component is a DMOS transistor. |
地址 |
Neubiberg DE |