发明名称 Three dimensional integrated circuit electrostatic discharge protection and prevention test interface
摘要 The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.
申请公布号 US9252593(B2) 申请公布日期 2016.02.02
申请号 US201213716272 申请日期 2012.12.17
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Wang Mill-Jer;Peng Ching-Nen;Lin Hung-Chih;Chen Hao
分类号 G01R31/10;H02H9/04;G01R1/073;G01R1/36 主分类号 G01R31/10
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A method of providing electrostatic discharge protection comprising the steps of: (a) providing a probe card assembly electrically connected to a plurality of input/output (I/O) channels; (b) contacting the probe card assembly with a secondary assembly, the secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test, the one or more wafers having charges thereon; (c) forcing a first voltage on ones of the plurality of I/O channels of the probe card assembly, so as to program I/O levels of the device under test to the first voltage; and (d) after step (c), forcing a second voltage of same magnitude and opposite sign from the first voltage on the ones of the plurality of I/O channels of the probe card assembly, so as to program the I/O levels of the device under test to the second voltage, to dissipate the charges.
地址 Hsin-Chu TW