发明名称 |
Semiconductor structure and manufacturing method for the same |
摘要 |
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a conductive layer, a conductive architecture and a dielectric layer. The conductive layer defines adjacent first openings. The conductive architecture surrounds a portion of the conductive layer between the first openings. The dielectric layer separates the conductive layer and the conductive architecture. |
申请公布号 |
US9252231(B2) |
申请公布日期 |
2016.02.02 |
申请号 |
US201414301414 |
申请日期 |
2014.06.11 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Lai Erh-Kun |
分类号 |
H01L21/4763;H01L29/51;H01L29/792;H01L27/115;H01L23/528;H01L29/66;H01L21/311;H01L29/423;H01L21/28 |
主分类号 |
H01L21/4763 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A semiconductor structure, comprising:
a conductive layer defining adjacent first openings; a conductive architecture surrounding a portion of the conductive layer between the first openings, wherein the conductive architecture comprises: first conductive portions filling the first openings of the conductive layer; and a second conductive portion connecting the first conductive portions, and disposed on or under the conductive layer; and a dielectric layer separating the conductive layer and the conductive architecture. |
地址 |
Hsinchu TW |