发明名称 Semiconductor structure and manufacturing method for the same
摘要 A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a conductive layer, a conductive architecture and a dielectric layer. The conductive layer defines adjacent first openings. The conductive architecture surrounds a portion of the conductive layer between the first openings. The dielectric layer separates the conductive layer and the conductive architecture.
申请公布号 US9252231(B2) 申请公布日期 2016.02.02
申请号 US201414301414 申请日期 2014.06.11
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lai Erh-Kun
分类号 H01L21/4763;H01L29/51;H01L29/792;H01L27/115;H01L23/528;H01L29/66;H01L21/311;H01L29/423;H01L21/28 主分类号 H01L21/4763
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor structure, comprising: a conductive layer defining adjacent first openings; a conductive architecture surrounding a portion of the conductive layer between the first openings, wherein the conductive architecture comprises: first conductive portions filling the first openings of the conductive layer; and a second conductive portion connecting the first conductive portions, and disposed on or under the conductive layer; and a dielectric layer separating the conductive layer and the conductive architecture.
地址 Hsinchu TW