| 发明名称 | Shallow trench isolation for end fin variation control | ||
| 摘要 | A method of fabricating a fin field effect transistor (FinFET) device and the device are described. The method includes forming a deep STI region adjacent to a first side of an end fin among a plurality of fins and lining the deep STI region, including the first side of the end fin, with a passivation layer. The method also includes depositing an STI oxide into the deep STI region, the passivation layer separating the STI oxide and the first side of the end fin, etching back the passivation layer separating the STI oxide and the first side of the end fin to a specified depth to create a gap, and depositing gate material, the gate material covering the gap. | ||
| 申请公布号 | US9252044(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201414223106 | 申请日期 | 2014.03.24 |
| 申请人 | International Business Machines Corporation | 发明人 | Basker Veeraraghavan S.;Liu Zuoguang;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 | H01L27/088;H01L29/06;H01L29/49;H01L21/762;H01L29/66 | 主分类号 | H01L27/088 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of fabricating a fin field effect transistor (FinFET) device including both shallow and deep shallow trench isolation (STI) regions, the method comprising: forming a deep STI region adjacent to a first side of an end fin among a plurality of fins; lining the deep STI region, including the first side of the end fin, with a passivation layer; depositing an STI oxide into the deep STI region, the passivation layer separating the STI oxide and the first side of the end fin; etching back the passivation layer separating the STI oxide and the first side of the end fin to a specified depth to create a gap extending from a sidewall of the STI oxide to the first side of the end fin, the gap being located directly between the sidewall of the STI oxide and the first side of the end fin; and depositing gate material, the gate material covering the gap. | ||
| 地址 | Armonk NY US | ||