| 发明名称 | Lithography method with combined optimization of radiated energy and design geometry | ||
| 摘要 | A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses. | ||
| 申请公布号 | US9250540(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201113641128 | 申请日期 | 2011.04.13 |
| 申请人 | Commissariat A L'Energie Atomique et aux Energies Alternatives | 发明人 | Manakli Serdar |
| 分类号 | A61N5/00;G03B27/32;G03B27/54;G03F7/20;B82Y10/00;B82Y40/00;H01J37/317 | 主分类号 | A61N5/00 |
| 代理机构 | Baker & Hostetler LLP | 代理人 | Baker & Hostetler LLP |
| 主权项 | 1. A lithography method based on radiation of at least one pattern to be etched on a resin-coated support comprising: a step of calculation of the modulation of at least one radiated dose; and a step of calculation of at least one adjustment to be made to said pattern to be etched in at least one direction of the support, wherein said adjustment is a function of process energy latitude at the point where the radiated dose is received and the modulation of the radiated dose is modified according to said at least one adjustment of said at least one pattern. | ||
| 地址 | Paris FR | ||