发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress a decrease in a switching speed between a transistor and a cathode due to an inductance of a wiring between a drain electrode and a cathode electrode of a diode.SOLUTION: A transistor and a diode are formed on a substrate. The transistor and the diode are arranged in a first direction. On the substrate, a first wiring, a first branch wiring and a second branch wiring are further formed. The first wiring extends between the transistor and the diode. The first branch wiring extends from the first wiring in a direction overlapping with the transistor, and is connected to the transistor. The second branch wiring extends from the first wiring in a direction overlapping with the diode, and is connected to the diode.SELECTED DRAWING: Figure 2
申请公布号 JP2016018871(A) 申请公布日期 2016.02.01
申请号 JP20140140188 申请日期 2014.07.08
申请人 RENESAS ELECTRONICS CORP 发明人 MIURA YOSHINAO
分类号 H01L21/822;H01L21/28;H01L21/329;H01L21/8232;H01L21/8234;H01L27/04;H01L27/06;H01L27/095;H01L29/47;H01L29/872 主分类号 H01L21/822
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