| 摘要 |
PROBLEM TO BE SOLVED: To allow for efficient injection or detection of carrier spin.SOLUTION: A spin element includes a first semiconductor layer 103 formed on a substrate 101, a second semiconductor layer 104 formed on the first semiconductor layer 103, and a third semiconductor layer 105 formed on the second semiconductor layer 104. The second semiconductor layer 104 has band-gap energy smaller than that of the first semiconductor layer 103, and the third semiconductor layer 105 has band-gap energy larger than that of the second semiconductor layer 104. Consequently, the first semiconductor layer 103, second semiconductor layer 104, and third semiconductor layer 105 have a double heterostructure. The spin element further includes a first electrode 107 and a second electrode 108 consisting of p-type thin magnetic semiconductor and arranged while holding a field application electrode 106 therebetween in the plane direction of the substrate 101, and connected with the second semiconductor layer 104.SELECTED DRAWING: Figure 1 |
