发明名称 CONDUCTIVE PATTERN FORMATION METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a conductive pattern formation method capable of suppressing an abnormal shape caused by reattachment of a neodymium component.SOLUTION: The conductive pattern formation method includes steps of: forming an aluminum-neodymium alloy film on a substrate; forming a conductive film having thickness of equal to or greater than 1/4 of a thickness of the aluminum-neodymium alloy film on the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.SELECTED DRAWING: Figure 4
申请公布号 JP2016018948(A) 申请公布日期 2016.02.01
申请号 JP20140142024 申请日期 2014.07.10
申请人 SEIKO EPSON CORP 发明人 SERA HIROSHI
分类号 H01L29/423;G02F1/1368;H01L21/28;H01L21/3065;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L29/49;H01L29/786 主分类号 H01L29/423
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