发明名称 |
CONDUCTIVE PATTERN FORMATION METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a conductive pattern formation method capable of suppressing an abnormal shape caused by reattachment of a neodymium component.SOLUTION: The conductive pattern formation method includes steps of: forming an aluminum-neodymium alloy film on a substrate; forming a conductive film having thickness of equal to or greater than 1/4 of a thickness of the aluminum-neodymium alloy film on the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.SELECTED DRAWING: Figure 4 |
申请公布号 |
JP2016018948(A) |
申请公布日期 |
2016.02.01 |
申请号 |
JP20140142024 |
申请日期 |
2014.07.10 |
申请人 |
SEIKO EPSON CORP |
发明人 |
SERA HIROSHI |
分类号 |
H01L29/423;G02F1/1368;H01L21/28;H01L21/3065;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L29/49;H01L29/786 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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