| 摘要 |
The present invention relates to an antireflective film composition which is used for semiconductor lithography processes. More particularly, the present invention relates to a novel isocyanurate compound to improve refractive index of an antireflective film, and an antireflective film composition comprising the same. The novel isocyanurate compound in the present invention is a key material in manufacturing an antireflective film composition for semiconductor manufacturing processes, and has high refractive index, rapid etching speed, and excellent coating properties. The antireflective film composition in the present invention has excellent coating uniformity and shows remarkable planarization characteristics on a wafer having large variation in coating uniformity. |
