SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device comprises a circuit element on a substrate, a first interlayer insulating film, a through electrode structure, an etch-stop film patter, a blocking film pattern, and an interconnection structure. The first interlayer insulating film is formed on the substrate and covers the circuit element. The through electrode structure penetrates the first interlayer insulating film and penetrates a portion of the substrate. The etch-stop film pattern is formed on an upper sidewall of the through electrode structure. The blocking film pattern is formed on the etch-stop film pattern and partially exposes at least an upper surface of the through electrode structure. The interconnection structure penetrates the blocking film pattern to be electrically connected to the through electrode structure and comprises a via part and a wiring part of different widths.