| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which light emitting elements 1000 of high optical output power can be manufactured with good mass productivity.SOLUTION: A method of manufacturing light emitting elements 1000 according to an embodiment of the present invention includes the steps of: preparing a wafer that includes a growth substrate 10, and a semiconductor structure 20 formed on the growth substrate 10, a lower side of the wafer being a growth substrate 10 side, and an upper side of the wafer being a semiconductor structure 20 side; forming a separation groove 30 with a bottom from an upper side of the wafer; forming a p-electrode and an n-electrode 42 on an upper side of the semiconductor structure 20; forming a dielectric multilayer film 52 on an upper side of the wafer, including the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements 1000 by removing a portion of the wafer from a lower side of the wafer so as to reach the bottom of the separation groove 30. |
