| 发明名称 |
LIGHT EMITTING DIODE (LED) DIE HAVING STRAP LAYER AND METHOD OF FABRICATION |
| 摘要 |
A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer via, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the second type semiconductor layer. |
| 申请公布号 |
US2016027978(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201414341815 |
申请日期 |
2014.07.27 |
| 申请人 |
SemiLEDs Optoelectronics Co., Ltd. |
发明人 |
SHIH YI-FENG |
| 分类号 |
H01L33/62;H01L33/00;H01L33/38;H01L33/06;H01L33/60 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED) die comprising:
an epitaxial stack comprising a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer; a first pad in electrical communication with the first-type semiconductor layer; a second pad in electrical contact with the second-type semiconductor layer; a strap layer comprising a plurality of conductive straps in electrical contact with the second pad and with a plurality of contact areas on the second-type semiconductor layer; and an electrical insulator layer on the strap layer configured to electrically insulate the strap layer from the second pad. |
| 地址 |
Chu-Nan TW |
