发明名称 |
Methods of Forming Charge-Trapping Regions |
摘要 |
Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to form a dispersion, forming an aerosol from the dispersion, and then directing the aerosol onto a substrate to form charge-trapping centers comprising the nanoparticles. The charge-trapping zones may be incorporated into flash memory cells. |
申请公布号 |
US2016027883(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201514875497 |
申请日期 |
2015.10.05 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sinha Nishant |
分类号 |
H01L29/423;H01L21/288;H01L21/02;H01L21/28;H01L21/285 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a charge-trapping zone, comprising:
forming a plurality of nanoparticles; coating the nanoparticles with electrically conductive material to form coated nanoparticles prior to transferring the nanoparticles to the liquid transferring the coated nanoparticles to a liquid, and forming a dispersion of the nanoparticles within the liquid; forming an aerosol from the dispersion; and directing the aerosol onto a substrate utilizing the aerosol to form charge-trapping centers comprising the nanoparticles, individual charge-trapping centers being spaced from one another by intervening gaps. |
地址 |
Boise ID US |