发明名称 Methods of Forming Charge-Trapping Regions
摘要 Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to form a dispersion, forming an aerosol from the dispersion, and then directing the aerosol onto a substrate to form charge-trapping centers comprising the nanoparticles. The charge-trapping zones may be incorporated into flash memory cells.
申请公布号 US2016027883(A1) 申请公布日期 2016.01.28
申请号 US201514875497 申请日期 2015.10.05
申请人 Micron Technology, Inc. 发明人 Sinha Nishant
分类号 H01L29/423;H01L21/288;H01L21/02;H01L21/28;H01L21/285 主分类号 H01L29/423
代理机构 代理人
主权项 1. A method of forming a charge-trapping zone, comprising: forming a plurality of nanoparticles; coating the nanoparticles with electrically conductive material to form coated nanoparticles prior to transferring the nanoparticles to the liquid transferring the coated nanoparticles to a liquid, and forming a dispersion of the nanoparticles within the liquid; forming an aerosol from the dispersion; and directing the aerosol onto a substrate utilizing the aerosol to form charge-trapping centers comprising the nanoparticles, individual charge-trapping centers being spaced from one another by intervening gaps.
地址 Boise ID US