| 发明名称 |
FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION |
| 摘要 |
A semiconductor device including a plurality of suspended nanowires and a gate structure present on a channel region portion of the plurality of suspended nanowires. The gate structure has a uniform length extending from an upper surface of the gate structure to the base of the gate structure. The semiconductor device further includes a dielectric spacer having a uniform composition in direct contact with the gate structure. Source and drain regions are present on source and drain region portions of the plurality of suspended nanowires. |
| 申请公布号 |
US2016027870(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201414341434 |
申请日期 |
2014.07.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L29/06;H01L29/786;H01L27/12;H01L21/225;H01L21/84;H01L21/306;H01L21/02;H01L29/423;H01L29/66 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of suspended nanowires; a gate structure present on a channel region portion of the plurality of suspended nanowires, the gate structure having a uniform length extending from a upper surface of the gate structure to the base of the gate structure; a dielectric spacer having a uniform composition in direct contact with the gate structure, the dielectric spacer having a uniform length extending from a upper surface of the gate structure to the base of the gate structure; and source and drain regions present on source and drain region portions of the plurality of suspended nanowires. |
| 地址 |
Armonk NY US |
