| 摘要 |
PROBLEM TO BE SOLVED: To provide stably with excellent reproducibility, a GaO-based single crystal substrate having excellent shapeability.SOLUTION: There is provided a GaO-based single crystal substrate in which TTV(T) of a principal surface is 10 μm or less, WARP of the principal surface is 25 μm or less, a half-value width of rocking curve measurement of X-ray diffraction is 17 seconds or less, and the addition ratio of Sn is 0.003-1.0 mol%. |
