Double Sided NMOS/PMOS Structure and Methods of Forming the Same

摘要

A chip includes a dielectric layer having a top surface and a bottom surface, a first semiconductor layer overlying and bonded to the top surface of the dielectric layer, and a first Metal Oxide-Semiconductor (MOS) transistor of a first conductivity type. The first MOS transistor includes a first gate dielectric overlying and contacting the first semiconductor layer, and a first gate electrode overlying the first gate dielectric. A second semiconductor layer is underlying and bonded to the bottom surface of the dielectric layer. A second MOS transistor of a second conductivity type opposite to the first conductivity type includes a second gate dielectric underlying and contacting the second semiconductor layer, and a second gate electrode underlying the second gate dielectric.

主权项

1. A method comprising:
forming a first transistor at a top surface of a Semiconductor-On-Insulator (SOI) substrate, wherein the SOI substrate comprises:
a dielectric layer;a first semiconductor layer;a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are bonded to opposite surfaces of the dielectric layer, and the first transistor is formed on the second semiconductor layer; thinning the first semiconductor layer; forming a second transistor on the first semiconductor layer, wherein the first transistor and the second transistor are of opposite conductivity types; and forming a through-via penetrating through the first semiconductor layer, the dielectric layer, and the second semiconductor layer.