POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

A power MOS transistor and a manufacturing method therefor. The power MOS transistor allows a field oxidative stress transition area to be extended by providing a second U-shaped groove (400) at the bottom of a first U-shaped groove (500), thus greatly reducing a leakage current caused by a field oxidative stress and increasing the reliability of a component. The power MOS transistor can have a charge compensation area (205) provided in a drift area (201) at the bottom of the second U-shaped groove (400) and have a super junction structure formed between the charge compensation area (205) and the drift area (201) to increase the breakdown voltage of a high power component. The manufacturing method forms the second U-shaped groove (400) and the charge compensation area (205) by means of a self-alignment process. The process is simple, reliable, and easy to control and allows for reduced manufacturing costs for the power MOS transistor and increased yield thereof.