| 发明名称 |
Differential Crystal Oscillator Circuit |
| 摘要 |
A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency. |
| 申请公布号 |
US2016028349(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201414338241 |
申请日期 |
2014.07.22 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Rajavi Yashar;Kavousian Amirpouya;Khalili Alireza;Vahid Far Mohammad Bagher;Komijani Abbas |
| 分类号 |
H03B5/36 |
主分类号 |
H03B5/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A differential crystal oscillator circuit, comprising:
first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, the first MOSFET diode including a third transistor with a gate terminal of the third transistor only connected to a drain terminal of the third transistor through a first resistor, the second MOSFET diode including fourth transistor with a gate terminal of the fourth transistor only connected to a drain terminal of the fourth transistor through a second resistor, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency. |
| 地址 |
San Diego CA US |
