发明名称 |
CONDITIONING REMOTE PLASMA SOURCE FOR ENHANCED PERFORMANCE HAVING REPEATABLE ETCH AND DEPOSITION RATES |
摘要 |
Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer. |
申请公布号 |
WO2016014136(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
WO2015US28352 |
申请日期 |
2015.04.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KHAJA, ABDUL AZIZ;AYOUB, MOHAMAD;PINSON, JAY, D., II;ROCHA-ALVAREZ, JUAN CARLOS |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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