SYSTEM AND METHOD TO INHIBIT ERASING OF PORTION OF SECTOR OF SPLIT GATE FLASH MEMORY CELLS
摘要
<p>A system and method to inhibit the erasing of a portion of a sector of split gate flash memory cells while allowing the remainder of the sector to be erased is disclosed. The inhibiting is controlled by control logic that applies one or more bias voltages to the portion of the sector whose erasure is to be inhibited.</p>
申请公布号
WO2016014166(A1)
申请公布日期
2016.01.28
申请号
WO2015US35360
申请日期
2015.06.11
申请人
SILICON STORAGE TECHNOLOGY, INC.
发明人
KIM, JINHO;DO, NHAN;TKACHEV, YURI;YUE, KAI MAN;QIAN, XIAOZHOU;BAI, NING