发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device is provided. The method includes forming a first semiconductor element and a second semiconductor element in a semiconductor wafer. The first semiconductor element includes a first electrode formed on a front surface of the semiconductor wafer. The second semiconductor element is adjacent to the first semiconductor element and includes a second electrode formed on the front surface. The method further includes forming a first insulating layer on the front surface located at a first boundary portion between the first electrode and the second electrode; applying a specific potential different from a potential of the second electrode on the first electrode after the formation of the first insulating layer; and cutting the semiconductor wafer at the first boundary portion so as to divide the first semiconductor element from the second semiconductor element. |
申请公布号 |
US2016027662(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201514803500 |
申请日期 |
2015.07.20 |
申请人 |
Toyota Jidosha Kabushiki Kaisha |
发明人 |
Soeno Akitaka;Aoi Sachiko;Miyahara Shinichiro |
分类号 |
H01L21/326;H01L21/78 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
forming a first semiconductor element and a second semiconductor element in a semiconductor wafer, the first semiconductor element including a first electrode formed on a front surface of the semiconductor wafer, and the second semiconductor element being adjacent to the first semiconductor element and including a second electrode formed on the front surface; forming a first insulating layer on the front surface located at a first boundary portion between the first electrode and the second electrode; applying a specific potential different from a potential of the second electrode on the first electrode after the formation of the first insulating layer; and cutting the semiconductor wafer at the first boundary portion so as to divide the first semiconductor element from the second semiconductor element. |
地址 |
Toyota- shi JP |