发明名称 RADICAL GAS GENERATION SYSTEM
摘要 The objective of the present invention is to provide, in a remote plasma type film-forming treatment system, a radical gas generation system that is capable of performing a uniform treatment using a radical gas, even if, for example, the object to be treated has a large surface area. Then, in this radical gas generation system (500), a treatment chamber device (200) has a table (201) for rotating the object (202) to be treated. The radical gas generation device (100) has a plurality of electric discharge cells (70). In addition, each of the electric discharge cells (70) has an open portion (102), which communicates with the interior of the treatment chamber device (200), faces the object (202) to be treated, and sends out a radical gas (G2). Then, in a planar view, the farther from the rotation center position the discharge cell (70) is, the larger the facing surface area thereof becomes, which is a region wherein a first electrode member (1) and a second electrode member (31) are facing each other.
申请公布号 WO2016013131(A1) 申请公布日期 2016.01.28
申请号 WO2014JP78724 申请日期 2014.10.29
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION 发明人 WATANABE KENSUKE;TABATA YOICHIRO;NISHIMURA SHINICHI
分类号 H05H1/46;C23C16/50;H01L21/31 主分类号 H05H1/46
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