SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

Provided are: a silicon carbide semiconductor element wherein both conduction loss and switching loss are reduced; and a method for manufacturing the silicon carbide semiconductor element. In this silicon carbide semiconductor element, a second silicon carbide semiconductor layer in contact with the front surface of a first silicon carbide semiconductor layer has at least a first conductivity-type upper layer having a high impurity concentration. Above a JFET region sandwiched between body regions that are separately disposed in the first silicon carbide semiconductor layer, the silicon carbide semiconductor element has a channel removed region, which is a cutout formed by removing a high concentration layer from the front surface side of the second silicon carbide semiconductor layer, said high concentration layer having a higher impurity concentration than at least the impurity concentration of the JFET region. The width of the channel removed region is smaller than that of the JFET region.