| 摘要 |
FIELD: physics, computer engineering.SUBSTANCE: invention relates to computer engineering. A magnetic random access memory cell comprises a magnetic tunnel junction having an upper electrode; a first ferromagnetic layer having a first magnetisation direction; a second ferromagnetic layer having a second magnetisation direction which can be adjusted relative to the first magnetisation direction; a tunnel barrier layer between the first and second ferromagnetic layers; and an external layer, wherein the second ferromagnetic layer is situated between the external layer and the tunnel barrier layer; wherein the magnetic tunnel junction further comprises a magnetic or metallic layer on which the second ferromagnetic layer is deposited; and wherein the second ferromagnetic layer has a thickness between 0.5 nm and 2 nm, and is configured to provide the magnetic tunnel junction with magnetoresistance which is greater than 100% by annealing at temperature of 280°C-360°C during an annealing time period of 30 min to 2.5 h, with application of a magnetic field of 0.5-2 T.EFFECT: low spin polarised writing current with magnetoresistance of 100% or higher.16 cl, 5 dwg |
