VISIBLE AND INFRARED IMAGE SENSOR

摘要

A pixel array (100) including an Si x Ge y layer (109) disposed on a first semiconductor layer (131). A plurality of pixels (161, 163, 165, 167) is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels (161, 163, 167) separated from the Si x Ge y layer by a spacer region (111) and (2) a second portion of pixels (165) including a first doped region (120) in contact with the Si x Ge y layer. The pixel array also includes pinning wells (113, 115) disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells (113) extends through the first semiconductor layer. A second portion of the pinning wells (115) extends through the first semiconductor layer and the Si x Ge y layer.