Self-aligned thin film transistor with doping barrier and method of manufacturing the same

摘要

Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.

主权项

1. A self-aligned thin film transistor with a doping barrier, comprising:
a substrate; an active layer on the substrate and having a first doped region, a second doped region, and a channel region, the first doped region being a source region and the second doped region being a drain region; a gate insulating film on the channel region; a gate electrode on the gate insulating film; a doping source film including first and second doping source film portions respectively on the first doped region and the second doped region; a doping barrier including
a first doping barrier portion between the first doping source film portion and the first doped region, the first doping barrier portion being formed to delay diffusion and control an amount of doping materials diffusing from the first doping source film portion when forming the first doped region, anda second doping barrier portion between the second doping source film portion and the second doped region, the second doping barrier portion being formed to delay diffusion and control an amount of doping materials diffusing from the second doping source film portion when forming the second doped region; and source and drain electrodes provided so as to be electrically connected to the source and drain regions via the doping source film, wherein the first doping barrier portion and the first doped region are formed between the substrate and the source electrode, wherein the second doping barrier portion and the second doped region are formed between the substrate and the drain electrode, and wherein the gate insulating film is different from the first doping barrier portion and the second doping barrier portion.