发明名称 |
Semiconductor materials, transistors including the same, and electronic devices including transistors |
摘要 |
According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT). |
申请公布号 |
US9245957(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201314093121 |
申请日期 |
2013.11.29 |
申请人 |
Samsung Electronics Co., Ltd.;Samsung Display Co., Ltd. |
发明人 |
Kim Tae-sang;Kim Sun-jae;Kim Hyun-suk;Ryu Myung-kwan;Park Joon-seok;Seo Seok-jun;Seon Jong-baek;Son Kyoung-seok |
分类号 |
H01L29/10;H01L29/24;H01L29/786 |
主分类号 |
H01L29/10 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A compound semiconductor comprising:
zinc (Zn); nitrogen (N); and fluorine (F), wherein a composition ratio of fluorine (F) in the compound semiconductor with respect to materials except for zinc (Zn) is 3 at % or more. |
地址 |
Gyeonggi-do KR |