Thin film transistor substrates, display devices and methods of manufacturing display devices

摘要

A thin film transistor substrate may include a gate electrode on a base substrate, a gate insulation layer covering the gate electrode on the base substrate, an active pattern on the gate insulation layer, an etch-stop layer pattern partially exposing the active pattern, a source electrode and a drain electrode in contact with a portion of the exposed active pattern, and an inorganic barrier layer on the source electrode, the drain electrode, and the etch-stop layer pattern. The active pattern may be superimposed over the gate electrode. The source electrode and the drain electrode may be superimposed over both ends of the gate electrode. The inorganic barrier layer may be in contact with a remaining portion of the exposed active pattern.

主权项

1. A thin film transistor substrate, comprising:
a gate electrode on a base substrate, the gate electrode including at least two ends; a gate insulation layer covering the gate electrode on the base substrate; an active pattern on the gate insulation layer, the active pattern including an oxide semiconductor and being superimposed over the gate electrode; an etch-stop layer pattern including contact holes or openings through which the active pattern is partially exposed, the etch-stop layer pattern including a central portion and first and second peripheral portions, the first peripheral portion separated from the central portion by a first one of the contact holes or openings and the second peripheral portion separated from the central portion by a second one of the contact holes or openings, upper surfaces of the central portion and the first and second peripheral portions being substantially coplanar; a source electrode and a drain electrode in contact with a portion of the exposed active pattern, the source electrode and the drain electrode being superimposed over respective ends of the gate electrode; an inorganic barrier layer on the source electrode, the drain electrode, and the etch-stop layer pattern, the inorganic barrier layer including a metal oxide and being in direct contact with a remaining portion of the exposed active pattern; and a planarization layer directly on the inorganic barrier layer, the planarization layer including a transparent organic material, wherein the source electrode and the drain electrode partially fill the contact holes or the openings, the inorganic barrier layer is in contact with a bottom of a remaining portion of the contact holes or the openings, and the planarization layer fills the remaining portion of the contact holes or the openings.