Method of manufacturing precise semiconductor contacts

摘要

A first dielectric layer including a first opening is provided on a first surface of a semiconductor layer. A second dielectric layer is provided on top of the first dielectric layer in the first opening. A first portion of the second dielectric layer is then removed, such that a second portion of the second dielectric layer remains in the first opening. The first dielectric layer is then removed, leaving only the second portion of the second dielectric layer on the surface of the semiconductor layer. An epitaxial layer or a base dielectric layer is grown on the exposed portions of the first surface of the semiconductor layer not covered by the second portion of the second dielectric layer. The second portion of the second dielectric layer is then removed to define one or more contact windows, and a contact metal is deposited in the one or more contact windows.

主权项

1. A method comprising the steps of:
providing a first dielectric layer including a first opening on a first surface of a semiconductor layer, such that the first opening defines an exposed portion of the first surface of the semiconductor layer; providing a second dielectric layer on a surface of the first dielectric layer opposite the semiconductor layer and in the first opening; removing a first portion of the second dielectric layer, such that a second portion of the second dielectric layer remains in the first opening; substantially removing the first dielectric layer; growing an epitaxial layer on the exposed portion of the first surface of the semiconductor layer not covered by the second portion of the second dielectric layer; and removing the second portion of the second dielectric layer to define one or more contact windows in the epitaxial insulating layer through which a portion of the first surface of the semiconductor layer is exposed.