发明名称 |
Semiconductor device and fabricating process for the same |
摘要 |
A semiconductor device and a fabricating process for the same are provided. The semiconductor device includes a base layer having a part of a reactive material; and a self-assembled protecting layer of a self-assembled molecule reacting with the reactive material formed over the part. |
申请公布号 |
US9245841(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201213553535 |
申请日期 |
2012.07.19 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Chien-Hua;Lee Chung-Ju;Huang Tsung-Min |
分类号 |
H01L29/08;H01L35/24;H01L51/00;H01L23/522;H01L23/532;H01L21/768 |
主分类号 |
H01L29/08 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A semiconductor device, comprising:
a base layer including a first conductive feature and a second conductive feature; a self-assembled protecting layer formed over the first conductive feature, the self-assembled protecting layer comprising a self-assembled molecule reacted with the first conductive feature; a dielectric layer formed on and contacting each of the self-assembled protecting layer and the base layer; and an opening formed through the dielectric layer, the opening exposing a top surface of the second conductive feature, wherein the top surface of the second conductive feature in the opening is free of the self-assembled protecting layer. |
地址 |
Hsin-Chu TW |