发明名称 Semiconductor device and fabricating process for the same
摘要 A semiconductor device and a fabricating process for the same are provided. The semiconductor device includes a base layer having a part of a reactive material; and a self-assembled protecting layer of a self-assembled molecule reacting with the reactive material formed over the part.
申请公布号 US9245841(B2) 申请公布日期 2016.01.26
申请号 US201213553535 申请日期 2012.07.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Huang Chien-Hua;Lee Chung-Ju;Huang Tsung-Min
分类号 H01L29/08;H01L35/24;H01L51/00;H01L23/522;H01L23/532;H01L21/768 主分类号 H01L29/08
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor device, comprising: a base layer including a first conductive feature and a second conductive feature; a self-assembled protecting layer formed over the first conductive feature, the self-assembled protecting layer comprising a self-assembled molecule reacted with the first conductive feature; a dielectric layer formed on and contacting each of the self-assembled protecting layer and the base layer; and an opening formed through the dielectric layer, the opening exposing a top surface of the second conductive feature, wherein the top surface of the second conductive feature in the opening is free of the self-assembled protecting layer.
地址 Hsin-Chu TW