Image sensor device with light guiding structure

摘要

An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

主权项

1. An image sensor device, comprising:
a semiconductor substrate having an array region and a periphery region; a light sensing region in the array region of the semiconductor substrate; a dielectric structure over the array region and the periphery region, wherein the dielectric structure has a substantially planar top surface; a recess in the dielectric structure substantially aligned with the light sensing region; a filter in the recess; and a light blocking grid in the dielectric structure surrounding a portion of the filter, wherein a bottom of the recess is below a bottom of the light blocking grid.