Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a Bessel beam shaper laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; patterning the mask with a Bessel shaped beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; subsequent to patterning the mask with the Bessel shaped beam laser scribing process, cleaning the exposed regions of the semiconductor wafer with a plasma process reactive to the semiconductor wafer; and subsequent to cleaning the exposed regions of the semiconductor wafer, plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.