Semiconductor device and production method thereof

摘要

An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

主权项

1. A semiconductor device having a connecting structure in which a copper wire is connected to an electrode part of a semiconductor element by wire bonding, wherein
the electrode part has a metal layer formed directly on a semiconductor layer and an aluminum layer laminated on the metal layer, a part of aluminum in a wire bonding part is removed by the wire bonding of the copper wire to the electrode part, and the copper wire is bonded to the metal layer via a compound layer comprising copper and aluminum and directly contacting the metal layer, wherein titanium is used as the metal layer, wherein silicon carbide is used as a substrate of the semiconductor element.