发明名称 |
Extreme ultraviolet lithography process and mask |
摘要 |
An extreme ultraviolet lithography (EUVL) process is performed on a target, such as a semiconductor wafer, having a photosensitive layer. The method includes providing a one-dimensional patterned mask along a first direction. The patterned mask includes a substrate including a first region and a second region, a multilayer mirror above the first and second regions, an absorption layer above the multilayer mirror in the second region, and a defect in the first region. The method further includes exposing the patterned mask by an illuminator and setting the patterned mask and the target in relative motion along the first direction while exposing the patterned mask. As a result, an accumulated exposure dose received by the target is an optimized exposure dose. |
申请公布号 |
US9244366(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201514692199 |
申请日期 |
2015.04.21 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Yen-Cheng;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
分类号 |
G03F7/20;G03F1/22;G03F7/22 |
主分类号 |
G03F7/20 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method comprising:
setting a patterned mask and a semiconductor substrate in relative motion with respect to each other, wherein the patterned mask includes a defect; and exposing the patterned mask with a radiation source while the patterned mask and the semiconductor substrate are in relative motion with respect to each other, wherein an accumulated exposure dose received by the semiconductor substrate is an optimized exposure dose. |
地址 |
Hsin-Chu TW |