发明名称 Methods, apparatus and system for reduction of power consumption in a semiconductor device
摘要 At least one method, apparatus and system disclosed herein involves performing power reduction process on a FinFET device. A first design is provided. The first design comprises a process mask definition, a FinFET device that comprises a plurality of fins characterized by said process mask, and a timing requirement relating to an operation of said FinFET device. A timing parameter of said operation of said FinFET device is determined. Based upon said timing parameter, a determination is made as to whether a drive capability of said FinFET device is above a level required to maintain said timing requirement. The process mask is modified for reducing at least one of said fins in response to said determining that said drive capability is above said level required to maintain said timing requirement.
申请公布号 US9245087(B1) 申请公布日期 2016.01.26
申请号 US201414473986 申请日期 2014.08.29
申请人 GLOBALFOUNDRIES INC. 发明人 Schroeder Uwe Paul;Davar Sushama
分类号 G06F17/50;H01L29/78;H01L27/088 主分类号 G06F17/50
代理机构 Williams Morgan, P.C. 代理人 Williams Morgan, P.C.
主权项 1. A method, comprising: providing a first design comprising a process mask definition, a FinFET device that comprises a plurality of fins characterized by said process mask, and a timing requirement relating to an operation of said FinFET device; determining a timing parameter of said operation of said FinFET device; determining, based upon said timing parameter, whether a drive capability of said FinFET device is above a level required to maintain said timing requirement; and modifying said process mask for reducing at least one of said fins in response to said determining that said drive capability is above said level required to maintain said timing requirement.
地址 Grand Cayman KY