Semiconductor device with embedded heat spreading

摘要

A semiconductor device includes a semiconductor substrate and a plurality of clock drivers, wherein the plurality of clock drivers comprises substantially all clock drivers of the semiconductor device, and an interconnect region over the semiconductor substrate, wherein the interconnect region comprises a plurality of heat spreaders, wherein at least 25% of the plurality of clock drivers have a corresponding heat spreader of the plurality of heat spreaders. Each corresponding heat spreader of the plurality of heat spreaders covers at least 50% of a transistor within a corresponding clock driver of the plurality of clock drivers and extends across at least 70% of a perimeter of the transistor within the corresponding clock driver.

主权项

1. A method for forming a semiconductor device comprising:
identifying at least 25% of a plurality of clock drivers, wherein the plurality of clock drivers comprises substantially all clock drivers of the semiconductor device; forming an interconnect region over the plurality of clock drivers, wherein forming the interconnect region comprises:
forming a first metal layer over the plurality of clock drivers, wherein the first metal layer comprises a plurality of heat spreaders, wherein each of the at least 25% of the plurality of clock drivers have a corresponding heat spreader of the plurality of heat spreaders, wherein:
each corresponding heat spreader of the plurality of heat spreaders covers at least 50% of a transistor within a corresponding clock driver of the plurality of clock drivers and extends across at least 70% of a perimeter of the transistor within the corresponding clock driver.