| 发明名称 |
OTP cell with reversed MTJ connection |
| 摘要 |
A one time programming (OTP) apparatus unit cell includes magnetic tunnel junctions (MTJs) with reversed connections for placing the MTJ in an anti-parallel resistance state during programming. Increased MTJ resistance in its anti-parallel resistance state causes a higher programming voltage which reduces programming time and programming current. |
| 申请公布号 |
US9245610(B2) |
申请公布日期 |
2016.01.26 |
| 申请号 |
US201213613168 |
申请日期 |
2012.09.13 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Kim Jung Pill;Kim Taehyun;Lee Kangho;Kang Seung H.;Li Xia;Hsu Wah Nam |
| 分类号 |
G11C11/00;G11C11/16;G11C17/02;G11C17/16 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
Min Donald D.;Holdaway Paul |
| 主权项 |
1. An anti-fuse memory, comprising:
an anti-fuse magnetic tunnel junction (MTJ) memory cell; and a programming driver configured to drive the anti-fuse MTJ memory cell with a programming voltage, wherein the anti-fuse MTJ memory cell is configured to switch into an anti-parallel state in response to being driven with the programming voltage, and wherein the programming driver is further configured to drive the anti-fuse MTJ memory cell with the programming voltage so as to break down a dielectric barrier in the anti-fuse MTJ memory cell after the anti-fuse MTJ memory cell switches into the anti-parallel state. |
| 地址 |
San Diego CA US |
