High electron mobility transistors and methods of manufacturing the same

摘要

High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

主权项

1. A high electron mobility transistor (HEMT), comprising:
a substrate including a cavity; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a plurality of sources, a drain, and a plurality of gates on the second semiconductor layer; and an etch stop region around the cavity of the substrate, wherein the etch stop region is a doped region; wherein a hole penetrates the first semiconductor layer and the second semiconductor layer between the cavity and the drain, the hole being an unfilled region connecting the cavity and the drain; and wherein a diameter of the hole is about 10 nm to about 10 μm.