Method for forming nitride film using plasma process

摘要

Disclosed is a method of forming a nitride film on an object to be processed (“processed object”). The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b).

主权项

1. A method of forming a nitride film on an object to be processed, the method comprising:
exposing the object to be processed to dichlorosilane which is a precursor gas so that a dichlorosilane based first reactant is chemisorbed onto the object to be processed; exposing the object to be processed to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after the exposing of the object to be processed to the dichlorosilane; exciting each of the hydrogen gas and the ammonia gas thereby generating a hydrogen radical and an ammonia radical; removing a chlorine in the first reactant through a hydrogen substitution reaction of the first reactant and the hydrogen radical thereby generating a second reactant; and performing a nitriding reaction of the second reactant and the ammonia radical thereby generating the nitride film.