Method for producing bit lines for UCP flash memories

摘要

A semiconductor device can be fabricated by forming a floating gate layer over a semiconductor body. The floating gate layer is at least partially arranged over an insulation region in the semiconductor body. The floating gate layer is patterned to expose a portion of the insulation region. A recess is formed in a portion of the insulation region exposed by the patterned floating gate layer. A conductor is deposited within the recess. The conductor serves as a buried bitline. An insulator can then be formed within the recess over the conductor.