| 发明名称 |
POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE |
| 摘要 |
An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. |
| 申请公布号 |
US2016020087(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201314378842 |
申请日期 |
2013.02.15 |
| 申请人 |
ENTEGRIS, INC. |
发明人 |
LIU Jun;BARNES Jeffrey A.;COOPER Emanuel I.;SUN Laisheng;THOMAS Elizabeth;CHANG Jason |
| 分类号 |
H01L21/02;C11D3/39;C11D11/00;C11D3/04;C11D3/34 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for cleaning residue and contaminants from a surface, said composition comprising at least one oxidizing agent, at least one complexing agent, at least one basic compound, at least one buffering agent, and water, wherein the composition is substantially devoid of amines, quaternary bases, fluoride-containing sources, and abrasive material typically used in chemical mechanical polishing processes. |
| 地址 |
Danbury CT US |
