发明名称 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY APPARATUS
摘要 A thin-film transistor as well as an array substrate utilizing same and a display apparatus. The thin-film transistor comprises: a gate electrode (11), a gate insulating layer, a semiconductor layer (12), a source electrode (13) and a drain electrode (14), the gate electrode (11) comprising a first area (111) located at the side of the source electrode (13), a second area (112) located at the side of the drain electrode (14) and a middle area (113) located between the first area (111) and the second area (112), the middle area (113) completely covering the semiconductor layer (12) arranged corresponding to the middle area (113), and at least one of the first area (111) and the second area (112) covering a partial area of the corresponding semiconductor layer (12). In the case of no use of a lightly-doped drain electrode, the leak current of the thin-film transistor is effectively suppressed, so that the cost can be decreased.
申请公布号 WO2016008224(A1) 申请公布日期 2016.01.21
申请号 WO2014CN88896 申请日期 2014.10.20
申请人 BOE TECHNOLOGY GROUP CO., LTD.;ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. 发明人 HAN, SHUAI;ZHANG, KUNPENG;GAO, PENGFEI;WANG, FENGGUO;BAI, NINI;KANG, FENG;LIU, YU
分类号 H01L29/786;H01L29/41 主分类号 H01L29/786
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